SCU2N60E/SCD2N60E
Category:
MOS tube
key word:
Description
Voltage range
Output power（THD+N=10%）
Output power（THD+N=1%）
Number of channels
Control end
Packaging form
Description:
These N-channel enhanced power field-effect transistors are produced using Silicore's advanced VDMOS technology, providing designers with excellent switching performance, robust device design, low on resistance, and cost-effectiveness.
Characteristic:
At VGS=10V, 600V, 2.0A, Rdson=4.5 Ω (typical value)
Low gate charge
Quick switching
Robust gate oxide technology with 100% avalanche testing
Product manual
Product Consultation
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